High and Balanced Hole and Electron Mobilities from Ambipolar Thin-Film Transistors Based on Nitrogen-Containing Oligoacences

We demonstrate a strategy for designing high-performance, ambipolar, acene-based field-effect transistor (FET) materials, which is based on the replacement of C−H moieties by nitrogen atoms in oligoacenes. By using this strategy, two organic semiconductors, 6,13-bis(triisopropylsilylethynyl)anthradipyridine (1) and 8,9,10,11-tetrafluoro-6,13-bis(triisopropylsilylethynyl)-1-azapentacene (3), were synthesized and their FET characteristics studied. Both materials exhibit high and balanced hole and electron mobilities, 1 having μh and μe of 0.11 and 0.15 cm2/V·s and 3 having μh and μe of 0.08 and 0.09 cm2/V·s, respectively. The successful demonstration of high and balanced ambipolar FET properties from nitrogen-containing oligoacenes opens up new opportunities for designing high-performance ambipolar organic semiconductors.

本研究展示了一种设计高性能、双极性、基于富勒烯烯的场效应晶体管（FET）材料的方法，该方法基于将寡聚富勒烯中的C−H基团替换为氮原子。通过采用此策略，合成了两种有机半导体，即6,13-双(三异丙基硅基乙炔基)蒽二吡啶（1）和8,9,10,11-四氟-6,13-双(三异丙基硅基乙炔基)-1-氮杂戊富勒烯（3），并对其FET特性进行了研究。这两种材料均表现出高且平衡的空穴和电子迁移率，其中1的μh和μe分别为0.11和0.15 cm²/V·s，而3的μh和μe分别为0.08和0.09 cm²/V·s。含氮寡聚富勒烯在实现高且平衡的双极性FET特性方面的成功展示，为设计高性能双极性有机半导体开辟了新的途径。