Graphene Schottky barrier diode acting as a semi-transparent contact to n-GaN

The successful development of graphene Schottky barrier diodes (Gr SBDs) acting as an efficient semi-transparent contact to n-GaN has been demonstrated. Gr Schottky barrier diodes on n-GaN sample grown by the metal organic vapor phase (MOVPE) technique were fabricated and used in the measurements of steady-state photo-capacitance (SSPC) and deep level optical spectroscopy (DLOS), respectively. It is shown that SSPC and DLOS spectra obtained for Gr SBDs are in excellent agreement with Ni-based semi-transparent contacts to n-GaN used in this study for comparison. Additionally, the optical capture cross-section data (σ0) derived from DLOS were fitted using the Lucovsky model, under the assumption of no lattice relaxation for all deep traps observed in this study.A set of raw experimental data that consists of:Raman spectra of CVD Graphene on GaN substrate.Capacitance-voltage traces and current-voltage characteristics for Ni/Au and Gr SBDs carried out at T = 293 K.Steady-state photo-capacitance (SSPC) spectra of the n-GaN samples with Ni/Au and Gr semi-transparent Schottky contacts.DLOS spectra corresponding to the SSPC data including Lucovsky model fitting.The voltage dependence of the ideality factor n in Gr/GaN and Ni/GaN SBDs.Density of states (Ds) vs Ec-E for Gr and Ni SBD.