Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength
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https://data.mendeley.com/datasets/5c9b7283td
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资源简介：
Conduction and valence band profiles calculated using Nextnano3 for InGaN/GaN single quantum well structures with Si-doped InGaN underlayers and different GaN cap layer thicknesses.
Photoluminescence spectra obtained at 10 K for those quantum well structures.
创建时间：
2018-11-28
