An Air-Stable DPP-thieno-TTF Copolymer for Single-Material Solar Cell Devices and Field Effect Transistors

Raw data for figures 2 to 8 in text file format. Excel can be used to re-plot or analyse the data. Acetone and chlorobenzene (CB), pentafluorobenzenethiol (PFBT), and octadecyltrichlorosilane (ODTS) were purchased from SigmaAldrich,
Ltd. poly(ethylenedioxythiophene)/poly(styrenesulfonate)
(PEDOT/PSS; Clevios P VP AI 4083) was purchase from HeraeusClevios.
Two sets of samples were fabricated in which one set was
fabricated with top-gate (TG)/bottom-contact configuration using
Cytop as an insulator. Gold source and drain electrodes (70 nm) were
deposited by high vacuum thermal evaporation on top of the silicon
substrate using a shadow mask of channel length (L) of 40 μm and a
channel width (W) of 1500 μm. Polymer p(DPP-TTF) was dissolved
in chloroform (CF) and CB separately (12 mg/mL) and then spin
coated at 1000 rpm and annealed at 200 °C for 30 min. Cytop was
then spin cast at 2000 rpm for 60 seconds and annealed at 100 °C for
30 min. These samples were then placed in the evaporator chamber for
deposition of aluminum (70 nm) as the gate electrode. The resulting
OFET was then characterized. Another set of devices with bottom-gate
(BG)/bottom-contact geometry was fabricated. Commercially available
(Fraunhofer Institute) n-doped silicon chips with 200 nm of
thermally grown SiO2 with prefabricated interdigitated Au fingers
having channel length of 10 μm, width of 1 cm, and capacitance per
unit area of 1.7 × 10−8 F/cm2 were used as substrates. Please refer to associated publication, ACS Applied Materials and Interfaces Vol 7, pp. 27999-28005, (2015), for further details.