Mapping of strain fields in doped Diamond undulators

Name: Mapping of strain fields in doped Diamond undulators
Creator: ESRF, 71 avenue des Martyrs, CS 40220, 38043 Grenoble Cedex 9, France; ESRF, 71 avenue des Martyrs CS 40220, 38043, Grenoble, FR
Published: 2028-01-01T00:00:00+08:00

ESRF Portal2028-01-01 更新2026-04-23 收录

晶体结构表征

波荡器材料

数据链接：

https://doi.esrf.fr/10.15151/ESRF-ES-2113731674 数据链接链接失效反馈

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资源简介：

We employ SXDM at ID01 to map local changes in the lattice parameter within homoepitaxial Diamond thin films for applications as undulators due to changes in the doping level

提供机构：

ESRF, 71 avenue des Martyrs, CS 40220, 38043 Grenoble Cedex 9, France; ESRF, 71 avenue des Martyrs CS 40220, 38043, Grenoble, FR

创建时间：

2028-01-01