Piezoelectric and thermal strain in AlGaN/GaN-based HEMTs in operation
收藏ESRF Portal2027-01-01 更新2026-04-23 收录
下载链接：
https://doi.esrf.fr/10.15151/ESRF-ES-1873392381
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资源简介：
We propose to acquire operando scanning X-ray diffraction microscopy (SXDM) maps on Al(Ga)N/GaN-based HEMT devices in operation mode. The study aims to probe the lattice distortion in the active layer of the device due to inhomogeneities in the electric field and temperature distribution. The results will help to bench-mark other techniques, such as micro-Raman scattering and device modelling.
提供机构：
Fraunhofer IISB; TU Bergakademie Freiberg; Argonne National laboratory,X-ray Science Division,9700 S. Cass Ave.,Building 438/B008,60439 ILLINOIS,60439,ILLINOIS,USA; Leibniz Institute for Crystal Growth,Berlin -Adlershof,12489 BERLIN,GERMANY,12489 ,BERLIN,GERMANY; Argonne National Laboratory,X-Ray Science Division,9700 S.Cass Avenue,B109,60439 LEMONT,60439,LEMONT,USA
创建时间：
2027-01-01
