Data underlying the publication: Cryogenic Characterization of Low-Frequency Noise in 40-nm CMOS

Data underlying the publication: Cryogenic Characterization of Low-Frequency Noise in 40-nm CMOS.<br>The data concerns cryogenic low-frequency noise characterization of CMOS transistors. A wide range of geometries and bias points are swept. Details on how the data was recorded are found in the associated paper and its supplementary. For using the data, please refer to the "README.txt" file that is part of the data.

本数据集为对应发表论文的支撑数据：40纳米互补金属氧化物半导体（CMOS，Complementary Metal-Oxide-Semiconductor）的低频噪声低温表征。
本数据集聚焦于CMOS晶体管的低频噪声低温表征。测试过程中扫描了涵盖多种几何尺寸与偏置工作点的大范围参数。关于数据采集的详细细节，请参阅关联论文及其补充材料。若需使用本数据集，请查阅数据集中附带的"README.txt"文件。