Organotin Dithiocarbamates: Single-Source Precursors for Tin Sulfide Thin Films by Aerosol-Assisted Chemical Vapor Deposition (AACVD)

A series of diorganotin complexes of dithiocarbamates
[Sn­(C4H9)2(S2CN­(RR′)2)2] (R, R′ = ethyl (1); R =
methyl, R′ = butyl (2); R, R′ = butyl (3); R = methyl, R′ = hexyl (4); and [Sn­(C6H5)2(S2CN­(RR′)2)2] (R, R′ = ethyl (5); R =
methyl, R′ = butyl (6); R, R′ = butyl (7); R = methyl, R′ = hexyl (8) were synthesized.
Single-crystal X-ray structures of 2, 3,
and 8 were determined. Thermogravimetric analysis (TGA)
showed single-step decomposition for the complexes 1, 3, and 5–8, and double-step
decomposition for the complexes 2 and 4 between
195 °C and 325 °C. Complexes 1–4 were used as single-source precursors for the deposition
of SnS thin films by aerosol-assisted chemical vapor deposition (AACVD)
at temperatures from 400 °C to 530 °C. Orthorhombic SnS
thin films were deposited from all four complexes at all deposition
temperatures. The films were characterized by UV–vis spectroscopy,
powder X-ray diffraction (p-XRD), Raman spectroscopy, scanning electron
microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), and
also electrical resistivity measurements.