Etch-Rate Selectivity in Anisotropic ALE of SiO₂
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https://orkg.org/comparison/R1561025
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资源简介：
Compares selectivity ratios between SiO₂ and other materials (Si₃N₄, Si), together with strategies for improving selectivity.
Rows specify selectivity range, enhancement method (precursor choice, fluorocarbon-film thickness, ion energy, benzaldehyde functionalization, etc.), plasma chemistries, and references.
Demonstrates how precursor structure and surface functionalization tune selective etching.
提供机构：
Open Research Knowledge Graph
创建时间：
2025-11-09
