Data and code from the manuscript "Modelling artificial neuron spiking based on diffusive memristor with two filaments"

The manuscript describes an investigation of the electrical properties of memristors with two independent conducting filaments, whose dynamics govern the switching between the resistive states. We uncover instabilities that lead to self-sustained spike generation and show that external voltage bias allows the coexistence of two characteristic spiking modes. Noise, either inherent or externally added, facilitates switching between these spiking regimes. Our model predictions align well with experimental results, offering the way for the development of neuromorphic devices for parallel signal processing.
Fig. 2 file contains: column 1 for external voltage, column 2 for one branch of the regime, column 3 for the second branch, other columns for colour coordinating of bifurcation information
Additional experimental spiking data are provided for two devices demonstrating two-height spiking amplitudes, those data were not plotted in the main text. This is complimentary to Fig. 6a in the main text
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