Experimental evaluation of the reliability of Wide Band Gap semiconductor devices during Space Weather Events
收藏DataCite Commons2021-04-27 更新2025-04-16 收录
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https://data.isis.stfc.ac.uk/doi/STUDY/113602053/
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资源简介：
Nowadays, electronic systems in avionics and automotive use new Wide Band Gap semiconductor Power Devices, mainly based on Silicon Carbide material. The hazard of device damages induced by neutrons due to the interaction of Terrestrial Cosmic Rays, which depend on the Space Weather conditions near earth, is a critical issue for the reliability of these devices. Usually, the neutrons effects on the Power Devices are investigated at room temperature. We propose to perform neutron tests of SiC and Si Power MOSFET’s at different temperatures, in the range -50 °C 200 °C.
提供机构：
ISIS Facility
创建时间：
2021-04-27
