Structural characterization of HfZrO-based structures by ALD for embedded ferroelectric non-volatile memories

The aim of this proposal is to better understand the operation of Ferroelectric Random Access Memory (FeRAM) based on HfxZr1 xO2 thin films (HZO) and the impact of electrical cycling on the material structure. This will be carried out by investigating the local environment via X ray Absorption Spectroscopy at the Hf L3 and Zr K edge, within the HZ O film constituting the FeRAM. Different material configurations (solid solution vs multilayer) and impact of cycling will help to better underst and the physical mechanisms behind.