Gate Drive Transformer Design and Comparison for 10kV Semiconductor High Voltage Switch
收藏IEEE2026-04-17 收录
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https://ieee-dataport.org/documents/gate-drive-transformer-design-and-comparison-10kv-semiconductor-high-voltage-switch
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资源简介：
This dataset contains raw experimental measurements of gate voltage waveforms for ten series-connected SiC MOSFETs driven by two different magnetic gate drive transformer cores (CF139T4212C and CF139T5818C). The data include rise and fall times, synchronization deviations, and timing performance comparisons under high-voltage switching conditions. The dataset enables researchers to reproduce the timing analysis, evaluate transformer design trade-offs, and validate methods for achieving reliable and low-delay gate driving in high-voltage solid-state switches.
提供机构：
Kurtulus Altun
