Measuring absorption coefficient of Si using photoexcited muon spin spectroscopy

Here we propose a photoexcited muon spin spectroscopy experiment to measure absorption coefficient - a key parameter in optical/photovoltaic applications in semiconductor engineering. We plan to utilize the photo-uSR technique originally developed for measuring charge carrier lifetime in Si, which utilizes the carrier exchange interaction of Mu. The project, therefore, aims for future applications in a wide range of semiconductors. We recently manufactured a new mirror box for HIFI, which would enable us to pump samples from the same side as muons. This proposal would be the first user experiment to use it and provide a good opportunity for testing.