High temperature FTIR data
收藏NIAID Data Ecosystem2026-05-02 收录
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https://doi.org/10.7910/DVN/SOMHXQ
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资源简介：
The statistical data in this document are all from the actual measurements of the members of the group, involving materials such as Al2O3, Ge, Nb, SiC, and a layer of TiN with a thickness of 200nm deposited on the flat silicon wafer
创建时间：
2024-06-26
