Neutron scattering study on noncollinear antiferromagnets D019 hcp-Mn3X (X = ...
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Currently, we are reaching capacity limits in conventional Si-based memory devices, due to restrictions on further miniaturization. The concept of antiferromagnetic spin...
当前，传统硅基（Si-based）存储器件已逼近容量极限，这是因为其进一步微型化的进程受到了技术限制。反铁磁自旋（antiferromagnetic spin）的相关概念……
