Data for paper: Thin Al1-xGaxAs0.56Sb0.44 diodes with low excess noise

The files correspond to experimental results in paper: "Thin Al1-xGaxAs0.56Sb0.44 diodes with low excess noise" published in IEEE Journal of Selected Topics in Quantum Electronics (Volume: 24, Issue: 2, March-April 2018), DOI: https://doi.org/10.1109/JSTQE.2017.2725441There are two types of files:- .png, which correspond to the figures- .csv, which are raw data in figuresThis work reports the excess noise characterization in a series of Al1-xGaxAs0.56Sb0.44 (x = 0, 0.05, 0.1, 0.15) diodes with avalanche layer thickness of 110-116 nm.The data consists of results from Al1-xGaxAs0.56Sb0.44 (x = 0, 0.05, 0.1, 0.15) photodiodes: dark and photocurrent, capacitance, avalanche gain, excess noise.

本数据集对应于发表于《IEEE精选量子电子学专题》杂志（第24卷，第2期，2018年3-4月）的论文《具有低过剩噪声的薄Al1-xGaxAs0.56Sb0.44二极管》：文件包括两种类型：.png格式的图片文件，对应于论文中的图表；.csv格式的原始数据文件，包含图表中的数据。本研究报道了一系列Al1-xGaxAs0.56Sb0.44（x = 0, 0.05, 0.1, 0.15）二极管的过剩噪声特性，这些二极管的雪崩层厚度为110-116 nm。数据集包含来自Al1-xGaxAs0.56Sb0.44（x = 0, 0.05, 0.1, 0.15）光电二极管的实验结果：暗电流和光电流、电容、雪崩增益以及过剩噪声。