Local structure modification around Si atoms in Si-implanted monocrystalline β-Ga2O3 (100) under heated substrate conditions

Name: Local structure modification around Si atoms in Si-implanted monocrystalline β-Ga2O3 (100) under heated substrate conditions
Creator: RepOD
Published: 2025-04-17T11:48:13+08:00

RepOD Repository for Open Data2025-04-17 更新2026-07-23 收录

β-Ga2O3离子注入掺杂

半导体局部原子结构

数据链接：

https://repod.icm.edu.pl/dataset.xhtml?persistentId=doi:10.18150/CYIRAU 数据链接链接失效反馈

官方服务：

资源简介：

Demchenko, Iraida; Syryanyy, Yevgen; Shokri, Asiyeh; Melikhov, Yevgen; Domagala, Jaroslaw; Minikayev, Roman ; Derkachova, Anastasiya; Munnik, Frans; Kentsch, Ulrich; Zając, Marcin; Reck, André; Haufe, Nora; Galazka, Zbigniew, 2025, "Local structure modification around Si atoms in Si-implanted monocrystalline β-Ga2O3 (100) under heated substrate conditions", https://doi.org/10.18150/CYIRAU, RepOD, V1

提供机构：

RepOD

创建时间：

2025-04-17