XRD pattern of Mo2Ga2C, Mo2CTx/Mo2GaC and Ni-Mo2CTx/Mo2Ga2C materials
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资源简介：
In the dataset are included raw data for the preparation of XRD pattern of Mo2Ga2C, Mo2CTx/Mo2GaC and Ni-Mo2CTx/Mo2Ga2C materials.
The MAX materials were synthesised according to the procedure:
1) Gring of Mo2C powder with liquid gallium for 60 min in agate mortar at molar ration equal to Mo2C:Ga=1:10.
2)Transfer to the quartz ampule.
3) Evacuating and purging the ampule in order to remove oxygen. Closing the ampule under vacuum.
4) High-temperature annealing at 850 deg. C for 48 hours. The heating rate was maintained at 10 deg. C per minute.
5) Removing potentially formed oxides through leaching with 35% hydrochloric acid.
6) Drying under vacuum at 50 deg. C to dry mass.
The preparation procedure for Mo2CTx/Mo2GaC:
1) Etching of Mo2Ga2C with XF/HCl mixture (where X= Na, Li, K) under hydrothermal conditions at 90 deg. C for 24 or 48 hours.
2) Washing with water.
3) Dring at 50 deg. C under vacuum.
The preparation procedure for Ni-Mo2CTx/Mo2GaC:
1) Impregnation of previously prepared Mo2CTx/Mo2GaC with aqueous nickel nitrate solution.
2) Dring at 50 deg. C under vacuum.
提供机构：
Gdańsk University of Technology
创建时间：
2022-09-14
