Research data supporting "Influence of AlxGa1-xN nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001)"

Fig 2 - XPS - 00% from growth (C7319A after etching).xlsx Fig 2 - XPS - 25% from growth (C7321A after etching).xlsx Fig 2 - XPS - 50% from growth (C7323A after etching).xlsx Fig 2 - XPS - 75% from growth (C7322A after etching).xlsx Fig 2 - XPS - 100% from growth (C7320A after etching).xlsx Fig 2 - XPS analysis.xlsx XPS raw data and analysis for Figure 2 Figure 3_AFM_annealed.zip AFM raw data of annealed samples for figure 3 Figure 3_AFM_asgrown.zip AFM raw data of as-grown samples for figure 3 Figure 4_AFM roughness and featuresize.zip AFM RMS roughness and featuresize analysis of as-grown and annealed nucleation layers Figure 5_XRD.zip XRD raw data of as-grown AlGaN nucleation layers Figure 6_strain.zip Strain analysis of the nucleation layers Figure 7_AFM_GaN epilayer.zip AFM raw data of GaN epilayers Figure 8_AFM roughness and featuresize.zip AFM RMS roughness and featuresize analysis of GaN epilayers Figure 9.zip XRD omega FWHM and zincblende content of GaN epilayers Figure 10.zip XRD texture maps raw data of GaN epilayers on AlGaN nucleation layers with varying Al content