Small-Signal Model Verification and Analysis of Unmatched Multi-Finger HBT Cells at 220 GHz

This dataset contains the simulated and calibrated measured scattering parameters (S-parameters) of a via, a short-circuit manifold test structure, a single heterojunction bipolar transistor (HBT) in common emitter (CE) configuration, and a 4-finger CE HBT cell. Six sites of the single CE HBT device were measured and five sites of the 4-finger CE HBT cell were measured. Bias point for all transistors was at V_ce: 2 V and J_c: 9.62mA/um^2. This dataset also contains the simulated and calibrated measured S-parameters of two 4-finger CE HBT cells, one with a 'Direct' finger alignment and one with a 'Paired' finger alignment, as well as one 2-finger common base (CB) cell. The simulated and measured stability factor (K factor) for the two CE cells and one CB cell is also included which is derived from the S-parameters of each cell. The simulated via and short-circuit manifold test structure as well as the manifolds for all multi-finger cells were obtained using a 2.5D method of moments commercial solver. The transistor model used was provided by the manufacturer and the simulated results for the devices with transistors were obtained from a commercial circuit solver using the HBT model and the results from the manifold simulations provided by the 2.5D solver.