半导体InSb纳米片数据集

场效应测量数据集主要面向InSb纳米片/hBN/石墨异质结体系中的转移特征曲线展开研究。在考虑两端电学测量接触电阻的基础上，利用GS200电压源表、电流放大器和34401A万用表获得沟道电流与栅压之间的关系，然后再利用Origin软件进行数值计算。Hall器件测量数据集主要面向InSb纳米片/hBN/石墨异质结体系制备的Hall器件中的场效应和磁致输运展开研究。利用直流两端测量方法获得沟道电导随顶栅和底栅电压的变化关系，并在某一栅压点处测量纵向电阻和Hall电阻随磁场变化关系，然后再利用Origin软件进行数值计算。本数据集主要记录了转移特征曲线、磁阻等数据。

The Field-Effect Measurement Dataset primarily focuses on the study of transfer characteristic curves in the InSb nanosheet/hBN/graphite heterostructure system. While accounting for contact resistance in two-terminal electrical measurements, the relationship between channel current and gate voltage was obtained using a GS200 voltage source meter, current amplifier, and 34401A multimeter, followed by numerical calculations via Origin software. The Hall Device Measurement Dataset focuses on the field-effect and magnetotransport properties of Hall devices fabricated from the InSb nanosheet/hBN/graphite heterostructure system. The dependence of channel conductance on top and bottom gate voltages was acquired through DC two-terminal measurement, and the variations of longitudinal resistance and Hall resistance with magnetic field were measured at a specific gate voltage point, followed by numerical calculations using Origin software. This dataset mainly records data including transfer characteristic curves, magnetoresistance, and other related measurement results.

搜集汇总

背景与挑战

背景概述

该数据集聚焦于InSb纳米片/hBN/石墨异质结体系的器件研究，主要包括场效应测量和Hall器件测量两部分数据，涉及转移特征曲线和磁致输运特性。数据集由北京大学徐洪起团队创建，数据量为86.4MB，包含74个文件，适用于半导体物理和纳米材料领域的分析。