Terahertz sensing based on the nonlinear electrodynamics of the two-dimensional correlated topological semimetal TaIrTe4

The development of terahertz (THz) sensing technologies is limited by the lack of sensitive, broadband, and fast terahertz detectors. Thermal bolometers are bulky and slow, whereas electronic terahertz detectors (such as Schottky diodes) are fast, but their sensitivity degrades quickly outside a narrow frequency window. Here, we show that a two-dimensional correlated topological semimetal, tantalum iridium telluride (TaIrTe4), has a large room temperature nonlinear Hall effect, and that the interaction between this effect and terahertz nonlinear electrodynamics can be used as a mechanism for terahertz sensing. Our photodetectors exhibit a high sensitivity (noise equivalent power of around 1 pW Hz-1/2) and a large zero-bias responsivity (around 0.3 A W-1) a broadband spectral range (0.1–10 THz) at room temperature with intrinsic ultrafast response time (around ps). The zero-bias responsivity and noise equivalent power performance can be further improved (to 18 A W-1 and 0.05 pW Hz-1/2, r..., , # Data from: Terahertz sensing based on the nonlinear electrodynamics of the two-dimensional correlated topological semimetal TaIrTe4

Dataset DOI: [10.5061/dryad.d7wm37qcg](10.5061/dryad.d7wm37qcg)

## Description of the data and file structure

This dataset contains:

1. Optical measurements of sample TaIrTe4 with methods including Second Harmonic Generation, Raman Spectroscopy and Linear Dichroism.
2. Transport measurement of sample TaIrTe4
3. Optoelectronics measurement of TaIrTe4. Photovoltage was collected when sample was exposed to THz wave, infrared laser and visible laser.
4. Calculations of Berry Curvature Dipole and band structure of TairTe4 based on first principle calculations.

The experimental and theoretical study aimed to reveal the THz sensing capability and characterize the correlated state.

### Files and variables

#### File: Figure2.xlsx

**Description:** This file contains all file used for analyzing Figure2, characterizing device performance at room temperature.
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