Band gap values both in spin up and spin down channel.

NIAID Data Ecosystem2026-05-02 收录

电子能带结构

自旋极化材料

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Band gap values both in spin up and spin down channel.

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2024-08-30

Bulk band structure of RuO₂ measured with soft X-ray angle-resolved photoemission spectroscopy

材料科学

电子能带结构

Altermagnetism exhibits unique physical properties such as spin-momentum locking, anomalous Hall effect, nontrivial topological phase, and giant magnetoresistance. Among all the predicted candidates,

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Higher-order gaps in the renormalized electronic band structure of doubly aligned bilayer graphene hBN moire′

凝聚态物理

电子能带结构

data for the figures

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Probing the noncollinear magnetic order correlating with electronic band structure in unexplored RMn2Ge2 (R=La, Tm)

磁性材料

电子能带结构

The concomitance occurrence of magnetism, spin-orbit coupling, and topological properties in quantum materials is relatively rare. Our experimental results suggest that RMn2Ge2 (R=La, Tm) system exhib

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THE ELECTRONIC BAND STRUCTURE AND DIELECTRIC RESPONSE FUNCTION OF ZnGa2S4 and ZnGa2Se4

半导体材料

电子能带结构

ZnGa2S4 and ZnGa2Se4 have the vacancy defect stannite structure, belonging to the II-III2-VI4 family of compounds. These materials have been investigated via density functional theory (DFT). The elect

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Electronic band splitting and spin texture induced by Dresselhaus spin-orbit coupling in ZnTe

半导体材料

电子能带结构

ZnTe is a fcc p-type II-VI semiconductor with a direct band gap of 2.26 eV and a wide range of applications. Despite its importance in modern electronic applications, up to now, there is surprisingly

DataCite Commons2025-03-03 更新40

Band gap values both in spin up and spin down channel.

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