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La2NiO4+δ-Based Memristive Devices Integrated on Si-Based Substrates

NIAID Data Ecosystem2026-05-02 收录

忆阻器器件

硅基集成技术

数据链接：

https://zenodo.org/record/6245528 数据链接链接失效反馈

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资源简介：

Data for publication: La2NiO4+δ-Based Memristive Devices Integrated on Si-Based Substrates

应用场景：

创建时间：

2024-07-17

忆阻器器件

多级存储性能

Dataset for article: Stathopoulos, S., Khiat, A., Trapatseli, M., Cortese, S., Serb, A., Valov, I., and Prodromakis, T. (2017). Multibit memory operation of metal-oxide bi-layer memristors. Scientifi

DataCite Commons2020-09-19 更新50

La2NiO4+δ-Based Memristive Devices Integrated on Si-Based Substrates

忆阻器件

硅基集成技术

Data for publication: La 2 NiO 4+δ -Based Memristive Devices Integrated on Si-Based Substrates

Zenodo2022-07-27 更新10

La2NiO4+δ-Based Memristive Devices Integrated on Si-Based Substrates

忆阻器器件

硅基集成技术

Data for publication: La 2 NiO 4+δ -Based Memristive Devices Integrated on Si-Based Substrates

Zenodo2022-07-27 更新00

TiO2-based memristive device Experimental Data

忆阻器器件

阻变存储技术

A set of electrical measurements from a TiO2-based memristive device is presented. The data correspond to a resistive switching device, with a Ag/ITO/TiO2/Ag MIM structure. The thickness of TiO2 is 50

IEEE2021-07-09 更新30

Multi-core memristor from electrically readable nanoscopic racetracks

忆阻器器件

纳米电子器件

Original figure data (Fig1 - Fig5 & FigS1 - FigS29) for Multi-core memristor from electrically readable nanoscopic racetracks

Harvard Dataverse2024-06-09 更新10