In-plane structural anisotropy in beta-gallium oxide single crystals

GaOx_anisotropy_raw_data contains x-ray diffraction scans performed on commercial undoped and Sn-doped beta-gallium oxide wafers ((-201) oriented) grown using Edge-defined Film-fed Growth method by Tamura corporation and Si-doped beta-gallium oxide crystal ((100) oriented) grown using Optical Floating Zone technique at TIFR crystal growth facility. X-ray diffraction scans were performed at different phi angles to find in-plane structural anisotropy in beta-gallium oxide crystals. Scans were performed for (-603) plane for commercial wafers and (400) plane for lab-grown crystals. Rigaku Smartlab diffractometer was used to perform these scans and all data files are in .ras format. Scans include omega, 2theta-omega, chi, z which were performed to find exact Bragg peak at each phi. All scans performed to obtain optimized values are also present. (For Sn-doped sample, z optimization was not performed.) 2theta, 2theta-theta and phi scans performed at optimized values are also present for Si-doped lab-grown sample and undoped commercial sample. Dataset also contains scans of Sn-doped wafer when chi optimization was not performed and can be used to compare with optimized peaks. Sn-doped commercial wafer scans - phi=0 to 360 with step of 15 degrees Si-doped lab grown crystal and undoped commercial wafer scans - phi=0 to 360 with step of 30 degrees