Enhanced Secondary-Electron Detection of Single Ion Implants in Silicon Through Thin SiO2 Layers

The experimental data in this spreadsheet was used to generate the results reported in the paper "Enhanced Secondary-Electron Detection of Single Ion Implants in Silicon Through Thin SiO2 Layers." Deterministic placement of single dopants is essential for scalable quantum devices based on group-V donors in silicon. We demonstrate a non-destructive, high-efficiency method for detecting individual ion implantation events using secondary electrons (SEs) in a focused ion beam system. Using low-energy Sb ions implanted into un-doped silicon, we achieve up to 98 ± 1% single-ion detection efficiency (DE). We find introducing thin, controlled SiO2 capping layers enhances SE yield, consistent with increased electron mean free path in the oxide, while maintaining successful ion deposition in the underlying silicon substrate. Our approach provides a robust and scalable route to precise donor placement and extends deterministic implantation strategies toa broad range of material systems and quantum device architectures. With the data supplied here, readers can reproduce all calculations and plots reported in the paper.