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Currently, the issue of perovskite film quality poses a challenge in the preparation of electroluminescent devices employing metal halide perovskites. In this paper, high quality perovskite films were prepared on sol-gel ZnO (s-ZnO) modified by poly [9-vinylcarbazole] (PVK). The formation of an N-H bond between PVK and perovskite improved film quality and reduced trap state density. The resulting PVK modified high efficiency green light-emitting diodes achieved a maximum current efficiency of 17.5 cd/A, which is 30% higher than the unmodified device. Additionally, the lifetime of the device was improved by 60%.当前，在制备采用金属卤化物钙钛矿的发光二极管过程中，钙钛矿薄膜的质量问题构成了一项挑战。在本研究中，我们通过在经聚[9-乙烯基咔唑](PVK)修饰的溶胶-凝胶法制备的ZnO（s-ZnO）上制备了高质量的钙钛矿薄膜。PVK与钙钛矿之间形成的N-H键改善了薄膜质量并降低了陷阱态密度。所得到的PVK修饰的高效绿色发光二极管实现了最大电流效率17.5 cd/A，相较于未修饰的器件提高了30%。此外，该器件的寿命提升了60%。