Extended Defects in SiC: Selective Etching and Raman Study

This dataset contains the data used for the publication titled "Extended Defects in SiC: Selective Etching and Raman Study". It should be noted that the data is not presented in a numerical form. There are multiple reasons for why that is, however the main reason constitutes the lack of access to non-analyzed raw data (i.e. raw data has been purged due to age, hardware failures, computer replacements, outsourcing laboratory being reluctant to share raw data due to internal regulations, etcetera). Furthermore, some measuring equipment used in this work is fully analog and therefore it does not produce digital output. For the reasons cited above, the data enclosed in this dataset takes the form of pictures in .jpg format. The following paragraphs contain: list of equipment used for data acquisition, abbreviations used in the article and the publication's abstract.1) List of Equipment:- Oriel UV-enhanced Xe lamp (300 W)- Tencore Alfa step profiler- NTegra atomic force microscope- Jobin Yvon-Horiba T64000 spectrometer- Ar ion laser- Acton spectrometer with an 1800rgroove/mm holographic grating- Princeton Instruments back-thinned, deep depleted, nitrogen-cooled CCD (1340 × 400 pixel array)- SEMRock dichroic beam splitter- Mitutoyo Microscope (×50 magnification)- Aerotech XYZ translator- Two custom photo-etching systems based on: 1) KOH and 2) KSO2) Abbreviations:KOH - Potassium hydroxideKSO - potassium peroxydisulphate (full formula: K2S2O8)GaN - Gallium nitrideGaAs - Gallium ArsenideSiC - Silicon Carbide4H-SiC - hexagonal SiC polytypeAr - ArgonXe - XenonSi - SiliconC - CarbonLOPC mode - Longitudinal optical phonon coupled modeUV - UltravioletAFM - Atomic force microscope/microscopyµRS - Micro raman spectrometerDIC - Differential interference contrast (microscopy)QPS - Quadrupole pattern of striationsBPD - Basal plane dislocationsMP - Micropipe3) Abstract:Controlling the electrical properties of SiC requires knowledge of the nature and properties of extended defects. We haveemployed orthodox defect-selective etching and photo-etching methods to reveal typical and new structural defects in com-mercial SiC wafers. For photo-etching, the etch rate increases as the free carrier concentration decreases. The etch ratecan be used to estimate the free carrier concentration with higher precision, and over a larger lateral and depth range thanthat accessed by Raman scattering. The logarithmic dependence of the etch rate on the free carrier concentration has beencharacterized.