Single in-situ interface characterization composed of niobium and a selectively grown topological insulator nanoribbon

With increasing interest in Majorana physics for possible quantum bit applications, a large interest has been developed to understand the properties of the interface between a s-type superconductor and a topological insulator. Up to this point the interface analysis was mainly focused on in-situ prepared Josephson junctions, which consist of two coupled single interfaces or to ex-situ fabricated single interface devices. In our work we utilize a novel fabrication process, combining selective area growth and shadow evaporation which allows the characterization of a single in-situ fabricated Nb/(Bi_0.15Sb_0.85)₂Te₃ nano interface. The resulting high interface transparency, is apparent by a zero bias conductance increase by a factor of 1.7. Furthermore, we present a comprehensive differential conductance analysis of our single in-situ interface for various magnetic fields, temperatures and gate voltages. Additionally, density functional theory calculations of the superconductor/topological insulator interface are performed in order to explain the peak-like shape of our differential conductance spectra and the origin of the observed smearing of conductance features.

This dataset contains the DFT and experimental raw data discussed in the associated publication.

随着对马约拉纳物理学的兴趣日益增长，特别是在可能的量子比特应用方面，对超导型 s 型超导体与拓扑绝缘体之间的界面性质的理解引起了广泛关注。迄今为止，界面分析主要集中于原位制备的约瑟夫森结，这些结由两个耦合的单个界面组成，或者为外场制备的单个界面器件。在我们的研究中，我们采用了一种新颖的制备工艺，结合了选择性区域生长和阴影蒸发，这允许我们表征单个原位制备的 Nb/(Bi_0.15Sb_0.85)₂Te₃ 纳米界面。所得到的高界面透明度，通过零偏置电导率增加1.7倍而显现。此外，我们还对单个体积界面的微分电导进行了全面的磁通量、温度和栅极电压分析。此外，为了解释我们微分电导光谱的峰形和所观察到的电导特征弥散的起源，我们进行了超导体/拓扑绝缘体界面的密度泛函理论计算。该数据集包含了相关出版物中讨论的 DFT 和实验原始数据。