Accelerated aging and junction temperature extraction experimental data of SiC MOSFET

In order to obtain the temperature sensitive electrical parameters VDS and junction temperature parameters from the non aging module of SiC MOSFET to the aging failure stage, the saturation voltage drop test was conducted on the SiC MOSFET module with the model of BSM300D12P2E001 (1200V/300A), and the junction temperature extraction test was conducted on the non aging module and the SiC MOSFET module after DC power cycle accelerated aging test.

为获取碳化硅金属氧化物半导体场效应晶体管（SiC MOSFET）从非老化状态直至老化失效阶段的温敏电参数VDS与结温参数，本研究针对型号为BSM300D12P2E001（1200V/300A）的SiC MOSFET模块开展饱和压降测试，并对非老化模块以及经过直流功率循环加速老化试验后的SiC MOSFET模块开展结温提取测试。