Interfaces between beta-Ga2O3 (100) and 3C-SiC (001) with oxidation of SiC

Collection of the structures optimized for the analysis of the interfaces of beta-Ga2O3 (100) on 3C-SiC (001). The files are named with the following scheme: POSCAR_A_B_C, where A labels the kind of slab, e.g. clean or oxidized surface and the material (3C-SiC vs Ga2O3), B labels the termination, and C labels the specific model/configuration, e.g. the type of reconstruction or the adsorption site, as reported by the work of Licciardi et al.[1]. [1]: http://arxiv.org/abs/2602.19820