Spin Transport in ScSe2 Nanoribbon Field Effect Transistor

Transition metal dichalcogenides, in the monolayer and nanoribbon forms, have found extensive use in various field-effect transistors. We investigated the potential of armchair ScSe2 nanoribbons, a new family member, as a spin-based field-effect transistor. By applying a gate voltage, we could control current flow in both up and down spins. The Ion/Ioff ratio reached as high as 105 with a subthreshold swing of about 74 mV/dec. The switching times are 0.019 and 0.05 ps for the spin up and down, respectively. Using the local device density of state, we explored the reasons behind these characteristics. We found that the effective density of states along the channel is altered in both spins, leading to different current–voltage characteristics. Our findings highlight ScSe2’s potential as a spin field effect transistor for future applications.