On the Vulnerability of UMOSFETs in Terrestrial Radiation Environments
收藏IEEE2026-04-17 收录
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https://ieee-dataport.org/documents/vulnerability-umosfets-terrestrial-radiation-environments
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资源简介：
The vulnerability of prominent silicon-based U-shaped Metal-Oxide-Semiconductor FieldEffect Transistors (UMOSFET) to destructive radiation effects when operating in terrestrial atmosphericenvironments is addressed. It is known that secondary particles from nuclear reactions between atmosphericneutrons and the constituent materials of electronic devices can trigger Single-Event Burnout (SEB)destructive failure in power MOSFETs. The susceptibility of UMOSFETs to SEBs induced by atmosphericneutrons in accelerated tests are compared to that of similarly rated traditional Double-diffused MOSFET(DMOSFET) counterparts. Based on computational simulations, strategies are proposed to enhance thesurvivability of next-generation UMOSFETs for high-reliability power systems operating on Earth.
提供机构：
Alberton, Saulo
