EML芯片模型仿真数据

EML芯片模型仿真数据在研发中不仅能预测性能指标（如带宽、消光比、波长漂移），还可以优化设计参数（如量子阱结构、电极、耦合区），并为系统链路性能评估和工艺可制造性分析提供重要参考，是研发过程中的“关键工具”。数据采集方式为：在Windows系统下，利用自主研发的光芯片性能仿真软件对有源区结构和材料进行求解计算，针对有源区厚度和材料组分以及量子阱个数等有源区结构参数进行建模仿真，得到波长满足要求的双有源区材料参数。在保证量子阱的势阱层和势垒层厚度不变的情况下，分别对当量子阱个数为4、6、8、10、12时的SAG-DSAL-EML的激光器部分进行稳态分析。最后仿真得到激射波长，光增益，边模抑制比。对所搭建对接集总电极的EAM模型进行高频分析，仿真得到频响带宽结果，并记录。数据量为2MB。

EML chip model simulation data serves as a "critical tool" during the R&D process. It can not only predict key performance metrics such as bandwidth, extinction ratio, and wavelength drift, but also optimize design parameters including quantum well structures, electrodes, and coupling regions, while providing important references for system link performance evaluation and process manufacturability analysis. The data is collected through the following steps: Under the Windows operating system, the independently developed optical chip performance simulation software is used to solve and calculate the active region structures and materials. Modeling and simulation are conducted on active region structural parameters such as active region thickness, material composition, and number of quantum wells, to obtain dual active region material parameters with wavelengths meeting the specified requirements. With the thicknesses of the quantum well layers and barrier layers of the quantum wells kept unchanged, steady-state analysis is performed on the laser section of the SAG-DSAL-EML device when the number of quantum wells is 4, 6, 8, 10, and 12 respectively. Finally, the lasing wavelength, optical gain, and side mode suppression ratio are obtained through simulation. High-frequency analysis is conducted on the established EAM model connected with lumped electrodes, and the frequency response bandwidth results are obtained via simulation and recorded. The total size of the dataset is 2 MB.

搜集汇总

背景与挑战

背景概述

该数据集是用于5G前传接入50G EML芯片的仿真数据，通过自主研发软件对芯片有源区结构进行建模仿真，以预测性能指标（如带宽、波长）和优化设计参数，数据量较小（约2MB），来源于国家重点研发计划项目，旨在支持光电子芯片研发。