Extreme Terahertz Nonlinearity of AlGaN/GaN-Based Grating-Gate Plasmonic Crystals - Dataset

This is a set of research data related to the article titled "Extreme Terahertz Nonlinearity of AlGaN/GaN-Based Grating-Gate Plasmonic Crystals", Advanced Optical Materials, Pages 2500716, 2025.The set contains numerical data used to create the next Figures:Fig.1a: FTIR-measured transmittance spectra of samples S13;Fig.1b: FTIR-measured transmittance spectra of samples S8;Fig.2a: The relative pump-induced changes in transmission, ΔT/T, measured at different pump pulse fluencies varied from 1.5 to 350 nJ cm−2 for sample S13 at gate voltage = 0V;Fig.2b: The relative pump-induced changes in transmission, ΔT/T, measured at different pump pulse fluencies varied from 1.5 to 350 nJ cm−2 for sample S13 at gate voltage = -3.5V;Fig.2c: The relative pump-induced changes in transmission, ΔT/T, measured at different pump pulse fluencies varied from 1.5 to 350 nJ cm−2 for sample S8 at gate voltage = -0.6V;Fig.2d: The relative pump-induced changes in transmission, ΔT/T, measured at different pump pulse fluencies varied from 1.5 to 350 nJ cm−2 for sample S8 at gate voltage = -4V;Fig.3a: Contour plots ofΔT/Tas a function of the gate voltage, VG, and delay time,Δt, for samples S13;Fig.3b: Contour plots ofΔT/Tas a function of the gate voltage, VG, and delay time,Δt, for samples S8;Fig.3c: Contour plots of FTIR transmittance (measured in linear regime) as a function of the frequency and gate voltage for the sample S13;Fig.3d: Contour plots of FTIR transmittance (measured in linear regime) as a function of the frequency and gate voltage for the sample S8;Fig.4a: Measured time delay dependence of ΔT/T of the sample S13 in the delocalized plasmonic phase at different equilibrium temperatures, T0;Fig.4b: The peak values of the pump-probe signal. Temperature dependence of ΔT/T peak values are taken at Δt = 0 ps;Fig.6: Steady-state field dependences of the drift velocity (curves 1a and 2a) and the electron temperature (1b and 2b) for two equilibrium temperatures T0 = 10 K and 150 K, respectively;Fig.7a: The waveform the incident and transmitted pulses in the time domain is calculated at Emax = 3 kV cm−1, 𝛿t = 16 ps, and 𝜈c = 1.84 THz;Fig.7b: The corresponding normalized power Fourier spectrum is calculated at a small field, Emax = 0.1 kV cm−1;Fig.7c-g: The snapshots of the spatial distribution of the magnetic components of the FEL pulse), which interact with the PC structure at different moments;Fig.8a,d: A spatial distribution of the electric field in the 2DEG plane of one period of the PC;Fig.8b,e: A spatial distribution of the electron drift velocity in the 2DEG plane of one period of the PC;Fig.8c,f: A spatial distribution of the electron temperature in the 2DEG plane of one period of the PC;Fig.9a: The calculated fluence dependences of ΔT/T characteristic at Δt = 0 ps for samples S13;Fig.9b: The calculated fluence dependences of ΔT/T characteristic at Δt = 0 ps for samples S8.