Growth and gas exchanges of arugula plants under silicon fertilization and water restriction

ABSTRACT The objective of this article was to study the growth and gas exchange of arugula plants under silicon (Si) fertilization and water stress. The experiment was installed in a greenhouse, located in the municipality of Pombal, PB, Brazil, whose geographic coordinates are 6º 46 ‘S latitude and 37º 49’ W longitude and 178 m of altitude, situated in the 'Sertão Paraibano' micro-region. The experimental design was in randomized blocks, in 5 x 2 factorial scheme, corresponding to five Si doses (0, 50, 100, 150 and 200 mg L-1) and two irrigation depths [50 and 100% of real evapotranspiration (ETr) based on weighing lysimeter], with four replicates. Silicon application was performed as foliar spray, using a commercial product composed of 0.75% Si and 0.15% Mo. Arugula growth and gas exchange was evaluated. Higher values for number of leaves and plant height were obtained in plants cultivated under 100% ETr. Silicon application between 100 and 120 mg L-1 led to better results in the physiological variables of arugula plants under water stress. Silicon application between 30 and 60 mg L-1 in arugula plants under 100% ETr irrigation allowed greater phytomass accumulation.