Supertetrahedral Layers Based on GaAs or InAs
收藏NIAID Data Ecosystem2026-03-11 收录
下载链接：
https://figshare.com/articles/dataset/Supertetrahedral_Layers_Based_on_GaAs_or_InAs/8792075
下载链接
链接失效反馈官方服务：
资源简介：
The solid-state compounds M15Tr22As32 and M3Ga6As8 (M = Sr, Eu; Tr = Ga, In) were synthesized
by heating the elements, and
their crystal structures were determined by single-crystal and powder
X-ray diffraction (space group C2/c). The structures are hierarchical variants of the HgI2 type and consist of layers of polymeric T5 (M15Tr22As32) or T6 supertetrahedra
(M3Ga6As8), separated
by strontium or europium cations. These compounds constitute hitherto
unknown GaAs- or InAs-based supertetrahedral structures and represent
the first binary vacancy-free T5 and T6 supertetrahedra. Vacancies
or mixed-metal strategies for charge compensation, as known from related
chalcogenides, are not required for supertetrahedra based on charge-neutral
GaAs or InAs. Optical band gap, resistivity, and Hall-effect measurements
together with DFT calculations reveal that the supertetrahedral compounds
are direct band gap semiconductors similar to binary GaAs or InAs.
Magnetic susceptibility measurements confirm Eu2+ in Eu15Ga22As32, Eu15In22As32, and Eu3Ga6As8 and
indicate antiferromagnetic ordering below 10 K.
创建时间：
2019-06-20
