Research on characteristic properties of ASiGe nanoribbons materials for nanoelectronics and optoelectronics applications

The paper presents the properties of the armchair SiGe nanoribbons
material configuration. Through the VASP calculation program, some basic
characteristic properties of electricity, magnetism, optics such as
electronic band structure, density of states, charge density distribution,
spin density distribution, real and imaginary parts of dielectric
functions, JDOS spectroscopy, as well as the rate of optical absorption
and reflection according to the wavelength of incoming light surveyed and
evaluated. The results show that the ASiGeNR structural system has a
direct band gap about 0.2410 eV, which opens at the  point. There is a
hybrid of sp2 and sp3 mixtures in the ASiGeNRs; the strength of σ bonds is
relatively stronger than that of π bonds; ASiGeNR systems can allow
electromagnetic waves to pass through, at most in the z-direction; the
respective energy levels and directions in which the AsiGeNR structure
absorbs or disperses energy most around 1.5 eV and 4.2 eV in the y and z
directions; peaks of 6.6 eV and 8.0 eV in the x direction. These results
have also shown that ASiGeRN absorbs the best photosynthesis for
wavelengths between 150 nm and 200 nm, and best reflectance at wavelengths
between 150 nm and 300 nm.