Accurate determination of matrix composition in semiconductor material using MS-SIMS and ToF-SIMS methods

This study focuses on the method for determining the exact composition for CdxZn1−xO semiconducting material using secondary ion mass spectrometry. The calibration curve method is employed to establish a quantitative relationship between the intensity of secondary ions and the concentrations of elements in CdxZn1−xO thin films. Additionally, the study compares the relative sensitivity factors with the calibration curve method for determining the value of x in CdxZn1−xO. A comparison between the performances of Time of Flight and Magnetic Sector SIMS in analyzing CdxZn1−xO thin films is also presented. This approach aims to enhance the accuracy and reliability of quantitative analysis in SIMS for CdxZn1−xO thin films.