Growth of InBi on InSb(100) via Molecular Beam Epitaxy

The binary bismides (AlBi, GaBi, and InBi) are materials that are a part of the familiar III-V material class but have properties that are distinct from the typical nitrides, phosphides, arsenides, and antimonides. Specifically, the binary bismides are all predicted to be topologically non-trivial materials that can take on the zincblende crystal structure. In addition, these materials all have narrow bandgaps that are suitable for mid-infrared optoelectronics. Successful growth of single-crystalline zincblende bismide films has the potential to revolutionize mid-wave and long-wave infrared devices as well as add topologically non-trivial materials to the III-V family. Here, we present growth of InBi on InSb(100) substrates using molecular beam epitaxy and characterization of these films using x-ray diffraction and scanning electron microscopy. Additionally, we report attempts at growth of GaBi on InSb(100) substrates and characterization of these films using x-ray diffraction and transmission electron microscopy. This work demonstrates growth of InBi on InSb(100) substrates, providing further insight into the bismides material system.