Data for: Intrinsic spin Hall torque in a moiré Chern magnet

In spin torque magnetic memories, electrically actuated spin currents are
used to switch a magnetic bit. Typically, these require a multilayer
geometry including both a free ferromagnetic layer and a second layer
providing spin injection. For example, spin may be injected by a
non-magnetic layer exhibiting a large spin Hall effect, a phenomenon known
as spin-orbit torque. Here, we demonstrate a spin-orbit torque magnetic
bit in a single two-dimensional system with intrinsic magnetism and strong
Berry curvature. We study AB-stacked MoTe2/WSe2, which hosts a magnetic
Chern insulator at a carrier density of one hole per moiré superlattice
site. We observe hysteretic switching of the resistivity as a function of
applied current. Magnetic imaging reveals that current switches correspond
to reversals of individual magnetic domains. The real space pattern of
domain reversals aligns with spin accumulation measured near the high
Berry curvature Hubbard band edges. This suggests that intrinsic spin- or
valley-Hall torques drive the observed current-driven magnetic switching
in both MoTe2/WSe2 and other moiré materials. The switching current
density is significantly less than those reported in other platforms,
suggesting moiré heterostructures are a suitable platform for efficient
control of magnetic order.