Texture of novel Sc and Mo metal silicides for advanced contact applications.

Novel materials for metal/semiconductor contacts such as Sc and Mo have shown great promise to achieve record low contact resistivity values. However, a detailed study of the structural properties of the corresponding metal silicides has not been conducted and is essential to enable further improvements in contact resistivity. The goal of this proposal is to investigate the silicidation of Sc and Mo, deposited on highly doped epitaxial source/drain (S/D) layers, when subjected to post-metal annealing (PMA) treatments.The resulting (poly)crystallinity, and in particular the texture, of the metal (silicide) will be investigated by conducting in situ X-ray diffraction (XRD) pole figure measurements.