Data for: Formation mechanism of high Ge content SiGe epilayer on Si by liquid phase epitaxy using Ge-Sn Solution
收藏Mendeley Data2020-04-27 更新2026-04-09 收录
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资源简介：
A typical surface morphology of the high Ge content SiGe epilayer prepared on Si(111) substrate.
创建时间：
2020-04-27
