Data for: Formation mechanism of high Ge content SiGe epilayer on Si by liquid phase epitaxy using Ge-Sn Solution

Name: Data for: Formation mechanism of high Ge content SiGe epilayer on Si by liquid phase epitaxy using Ge-Sn Solution
Published: 2020-04-27T00:00:00+08:00

Mendeley Data2020-04-27 更新2026-04-09 收录

半导体外延生长

异质结构

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资源简介：

A typical surface morphology of the high Ge content SiGe epilayer prepared on Si(111) substrate.

创建时间：

2020-04-27

Data for: Formation mechanism of high Ge content SiGe epilayer on Si by liquid phase epitaxy using Ge-Sn Solution

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