Study by nano-XRD of the coalescence of GaN nanopillars grown by Nano-Pendeo ...
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An original method has been developed for achieving low dislocation density gallium nitride (GaN) and managing the strain in the nitride layers. It is based on the...
本研究开发了一种可实现低位错密度氮化镓(GaN)并调控氮化物层应变的原创方法,该方法基于……



