Characterizing Mu in 6H-SiC with RF-MuSR

We propose a set of RF measurements on Silicon Carbide (polytype 6H) to identify and characterize the muonium species present below room temperature. One of the main goals of characterizing muonium with this experiment is to provide data that is essential to the analysis and interpretation of our recent experiment (RB1910567) where we used the laser system on HIFI to directly ionize Mu centers in an effort to directly measure the muonium impurity levels. In semiconductors, isolated hydrogen is electrically active and unavoidable in both material production and use. The high reactivity of H makes it a very interesting impurity but also very difficult to study. Muons have been very successful in functioning as an experimentally accessible analogue to isolated H impurities in materials. The proposed measurements will also add valuable information to the understanding of H impurities in SiC