Charge carrier distribution observation and manipulation in Si-MOS

Raw datasets measured in LEM of metal-oxide-semiconductor (MOS) structure. The sample consisted of Al/SiO2/Si.本数据集为针对金属氧化物半导体（Metal-Oxide-Semiconductor, MOS）结构、采用LEM（LEM）测量所得的原始数据，所用样品为Al/SiO2/Si结构。