Supporting data for Novel SiC MOSFETs with Merged Schottky or MOS-Channel Diode for Enhanced Performance Based on Numerical Simulations
收藏DataCite Commons2022-07-26 更新2025-04-16 收录
下载链接：
https://datahub.hku.hk/articles/dataset/Supporting_data_for_Novel_SiC_MOSFETs_with_Merged_Schottky_or_MOS-Channel_Diode_for_Enhanced_Performance_Based_on_Numerical_Simulations/20294439/1
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资源简介：
The data are about static and dynamic characteristics of proposed novel SiC MOSFETs. The results analysis includes output characteristics, breakdown characteristics, reverse conduction characteristics, gate charge characteristics, reverse transfer capacitance characteristics, inductive switching characteristics, electric field distributions, electron mobility distributions, and so on.
提供机构：
HKU Data Repository
创建时间：
2022-07-26
