晶圆级混合硅铌酸锂薄膜制备相关表征数据

本数据集为晶圆级混合硅铌酸锂薄膜制备相关表征数据，对应论文“Wafer-Scale Fabrication of Silicon Film on Lithium Niobate on Insulator (LNOI)”，数据来源单位为中科院上海微系统所，包括采用FDTD软件模拟的模式有效因子、单模条件对应的波导几何尺寸、垂直绝热耦合器尺寸效率等，以及采用HRXRD测得的晶体质量参数。文件夹总大小771.91KB。This dataset contains characterization data for wafer-scale hybrid silicon lithium niobate thin film fabrication, corresponding to the paper entitled "Wafer-Scale Fabrication of Silicon Film on Lithium Niobate on Insulator (LNOI)". The data is sourced from the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences. It includes parameters such as mode effective factors simulated using FDTD software, waveguide geometric dimensions corresponding to single-mode conditions, size efficiency of vertical adiabatic couplers, and crystal quality parameters measured via high-resolution X-ray diffraction (HRXRD). The total size of the dataset folder is 771.91 KB.

搜集汇总

背景与挑战

背景概述

该数据集提供了晶圆级混合硅铌酸锂薄膜制备相关的表征数据，对应关于绝缘体上铌酸锂硅薄膜晶圆级制备的研究论文。数据由中科院上海微系统所产生，包括基于FDTD模拟的模式有效因子、波导几何尺寸和垂直绝热耦合器效率，以及HRXRD测量的晶体质量参数。